Title:
A manufacturing method of a silicon carbide semiconductor device, and a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP5962475
Kind Code:
B2
Inventors:
Yousuke Nakanishi
Hiroaki Okabe
Motoi Yoshida
Kazuyuki Sugahara
Takanori Tominaga
Hiroaki Okabe
Motoi Yoshida
Kazuyuki Sugahara
Takanori Tominaga
Application Number:
JP2012267503A
Publication Date:
August 03, 2016
Filing Date:
December 06, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/28
Domestic Patent References:
| JP2007184571A | ||||
| JP2008153442A | ||||
| JP2011171551A | ||||
| JP10284436A | ||||
| JP8264468A | ||||
| JP2006128427A | ||||
| JP2004119406A | ||||
| JP10270553A |
Foreign References:
| WO2012060222A1 |
Attorney, Agent or Firm:
Tadahiko Inaba
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka