Title:
A manufacturing method of a silicon single crystal wafer
Document Type and Number:
Japanese Patent JP6044277
Kind Code:
B2
Inventors:
Ryoji Hoshi
Hiroyuki Kamada
Takayo Sugawara
Hiroyuki Kamada
Takayo Sugawara
Application Number:
JP2012246574A
Publication Date:
December 14, 2016
Filing Date:
November 08, 2012
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/20
Domestic Patent References:
| JP2001146498A | ||||
| JP2000053497A | ||||
| JP2001274166A | ||||
| JP2010222241A | ||||
| JP2010062466A | ||||
| JP2012188293A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi