Title:
A manufacturing method, a substrate processing device, and a program of a semiconductor device
Document Type and Number:
Japanese Patent JP6147480
Kind Code:
B2
Abstract:
Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film. The first element includes at least one element selected from a group consisting of aluminum, yttrium and lanthanum. A concentration of the second element in the second oxide film is controlled to be lower than that of the first element in the second oxide film.
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Inventors:
Ogawa manned
Application Number:
JP2012212464A
Publication Date:
June 14, 2017
Filing Date:
September 26, 2012
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/316; H01L21/336; H01L27/11568; H01L29/788; H01L29/792
Domestic Patent References:
| JP2009245958A | ||||
| JP2008244428A | ||||
| JP2006203200A | ||||
| JP2008135449A | ||||
| JP2011049531A | ||||
| JP2010182963A |
Foreign References:
| US20060046522 | ||||
| US7312494 | ||||
| US20080233762 | ||||
| US20110024875 |