Title:
Ａ／Ｍ／Ｘ材料の製作方法
Document Type and Number:
Japanese Patent JP7464595
Kind Code:
B2
Abstract:
The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.
Inventors:
Seiya Sakai
Wenger, Bernard
Snace, Henry James
Wenger, Bernard
Snace, Henry James
Application Number:
JP2021524125A
Publication Date:
April 09, 2024
Filing Date:
July 12, 2019
Export Citation:
Assignee:
OXFORD UNIVERSITY INNOVATION LIMITED
International Classes:
H01L33/26; C07F1/00; C07F1/08; C07F7/22; C07F7/24; C07F9/90; C07F13/00; C09K11/08; C09K11/61; C09K11/66; C09K11/75; H01L33/50
Foreign References:
| CN107099290A |
Attorney, Agent or Firm:
Patent Attorney Corporation Hiraki International Patent Office