Title:
A method for characteristic-izing susceptibility of the electronic component to a destructive mechanism
Document Type and Number:
Japanese Patent JP6023050
Kind Code:
B2
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Inventors:
Mirror, floran
Morand, Sebastian
Morand, Sebastian
Application Number:
JP2013517303A
Publication Date:
November 09, 2016
Filing Date:
June 30, 2011
Export Citation:
Assignee:
Elbus Group SRS
International Classes:
G01R31/30; G01R31/26
Foreign References:
| WO2009044058A2 | ||||
| WO2009056738A1 |
Other References:
LUU A,SEB CHARACTERIZATION OF COMMERCIAL POWER MOSFETS WITH BACKSIDE LASER 以下備考,IEEE TRANSACTIONS ON NUCLEAR SCIENCE,米国,IEEE SERVICE CENTER,2008年 8月 1日,V55 N4,P2166-2173,AND HEAVY IONS OF DIFFERENT RANGES
LUU A,SEB CHARACTERISATION OF COMMERCIAL POWER MOSFETS WITH BACKSIDE LASER 以下備考,9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2007 (RADECS 2007),米国,IEEE,2007年 9月10日,P1-7,AND HEAVY IONS OF DIFFERENT RANGES
MILLER F,CHARACTERIZATION OF SINGLE-EVENT BURNOUT IN POWER MOSFET USING BACKSIDE LASER TESTING,IEEE TRANSACTIONS ON NUCLEAR SCIENCE,米国,IEEE SERVICE CENTER,2006年12月 1日,V53 N6,P3145-3152
LUU A,SEB CHARACTERISATION OF COMMERCIAL POWER MOSFETS WITH BACKSIDE LASER 以下備考,9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2007 (RADECS 2007),米国,IEEE,2007年 9月10日,P1-7,AND HEAVY IONS OF DIFFERENT RANGES
MILLER F,CHARACTERIZATION OF SINGLE-EVENT BURNOUT IN POWER MOSFET USING BACKSIDE LASER TESTING,IEEE TRANSACTIONS ON NUCLEAR SCIENCE,米国,IEEE SERVICE CENTER,2006年12月 1日,V53 N6,P3145-3152
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Shigeki Yamakawa
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