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Title:
欠陥の少ない、亀裂のないエピタキシャル膜を不整合基板上に形成する方法
Document Type and Number:
Japanese Patent JP2004508268
Kind Code:
A
Abstract:
A method for the production of a crack-free epitiaxial film having a thickness greater than that which can be achieved by continuous epitaxial crystal growth. This epitaxial film can be used as is in a device, used as a substrate platform for further epitaxy, or separated from the initial substrate material and used as a free-standing substrate platform. The method utilizes a defect-rich initial layer that absorbs epitaxially derived stresses and another layer, which is not defect-rich, which planarizes the crystal growth front, if necessary and provides high quality epitaxial region near the surface.

Inventors:
Glen Solomon
David mirror
Tetsuzo Ueda
Application Number:
JP2002525283A
Publication Date:
March 18, 2004
Filing Date:
September 04, 2001
Export Citation:
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Assignee:
CB Technologies, Inc.
Matsushita Electric Industrial Co., Ltd
International Classes:
C30B29/38; C30B23/02; C30B25/02; C30B25/18; H01L21/203; H01L21/205; H01L33/22; H01L33/32; (IPC1-7): C30B29/38; H01L21/203; H01L21/205; H01L33/00
Domestic Patent References:
JPH10326751A1998-12-08
JPH11238687A1999-08-31
JP2001257166A2001-09-21
JP2000068559A2000-03-03
JPS5223600A1977-02-22
JPH10287496A1998-10-27
JPH09255496A1997-09-30
JPH10312971A1998-11-24
JPH11130597A1999-05-18
JP2001168045A2001-06-22
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Takashi Goto
Iseki Katsumori



 
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