Title:
シリコン基板上に結晶性の優れた窒化物半導体層を形成する方法および窒化物半導体発光素子
Document Type and Number:
Japanese Patent JP4320396
Kind Code:
B2
Inventors:
Kunio Ito
Shigeyuki Nakamura
Shigeyuki Nakamura
Application Number:
JP2002219871A
Publication Date:
August 26, 2009
Filing Date:
July 29, 2002
Export Citation:
Assignee:
National Institute of Technology
International Classes:
C30B29/38; C23C16/18; H01L21/205; H01L33/06; H01L33/12; H01L33/32; H01S5/323
Domestic Patent References:
| JP11274648A | ||||
| JP2001291896A | ||||
| JP8203932A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto