Title:
化合物半導体装置、受信機、及び化合物半導体装置の製造方法。
Document Type and Number:
Japanese Patent JP6978902
Kind Code:
B2
Abstract:
To provide a compound semiconductor device capable of increasing the integration density in a stochastic resonance transistor on a substrate, a receiver, and a manufacturing method of compound semiconductor device.SOLUTION: A compound semiconductor device 40 comprises: a substrate 20; multiple linear semiconductors 25 which are formed on the substrate 20 separated from each other each extending linearly upward from the substrate 20 which are electrically connected to each other at the upper ends 25b; a gate insulation layer 27 which is formed on the side face of each of the multiple linear semiconductors 25; and a gate electrode 28a formed on the gate insulation layer 27.SELECTED DRAWING: Figure 12
Inventors:
Kenichi Kawaguchi
Tsuyoshi Takahashi
Naoya Okamoto
Tsuyoshi Takahashi
Naoya Okamoto
Application Number:
JP2017217252A
Publication Date:
December 08, 2021
Filing Date:
November 10, 2017
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/336; H01L21/8234; H01L27/088; H01L27/146; H01L29/06; H01L29/78; H03F1/26; H03F3/68
Domestic Patent References:
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Foreign References:
| WO2011065500A1 | ||||
| WO2008034850A2 | ||||
| US20130240983 | ||||
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| KR1020140024836A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Yutaka Nikaido
Tadahiko Ito
Yutaka Nikaido
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