Title:
純シリコンを製造するための方法およびシステム
Document Type and Number:
Japanese Patent JP5632362
Kind Code:
B2
Abstract:
A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen.
Inventors:
シュミット，クリスティアン
ペトリック，アドルフ
ハーン，ヨヘム
ペトリック，アドルフ
ハーン，ヨヘム
Application Number:
JP2011502281A
Publication Date:
November 26, 2014
Filing Date:
March 31, 2009
Export Citation:
Assignee:
シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング
International Classes:
C01B33/035; C01B33/037
Attorney, Agent or Firm:
Aoki 篤
Ishida 敬
Tetsuji Koga
Yoshihiro Kobayashi
Tomoyasu Nagasaka
Atsushi Ebiya
Ishida 敬
Tetsuji Koga
Yoshihiro Kobayashi
Tomoyasu Nagasaka
Atsushi Ebiya