MICROCHAMBER LASER PROCESSING SYSTEMS AND METHODS USING LOCALIZED PROCESS-GAS ATMOSPHERE

Japanese Patent JP2017005251

A

PROBLEM TO BE SOLVED: To provide microchamber laser processing systems and methods that use a localized process-gas atmosphere.SOLUTION: A method includes processing a substrate 50 with a surface 52 by providing a process gas to a central region 70C of a microchamber 70 that includes the surface of the substrate and providing a curtain gas 212 to a peripheral region 70P of the chamber that includes the surface of the substrate. The method also includes providing a vacuum to a region of the chamber between its central and peripheral regions of the chamber. The vacuum removes a process gas 202 and curtain gas, thereby forming a localized process-gas atmosphere at the surface of the substrate in the central region of the chamber and a gas curtain 216 of the curtain gas in the peripheral region of the chamber. The method also includes irradiating the surface of the substrate through the localized process-gas atmosphere with a laser beam. The laser beam forms a laser line to perform a laser process on the surface of the substrate.SELECTED DRAWING: Figure 3

JAMES T MCWHIRTER

JP2016112619A

January 05, 2017

June 06, 2016

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ULTRATECH INC

H01L21/31; H01L21/318

JP2014110420A	2014-06-12
JPH05218006A	1993-08-27
JP2001244259A	2001-09-07
JP2013201300A	2013-10-03
JP2014053136A	2014-03-20
JP2012501537A	2012-01-19
JPH01502149A	1989-07-27
JP2005171272A	2005-06-30
JP2015034987A	2015-02-19

Hiroharu Kitahara
Yuji Tada
Satoshi Yamauchi
Seiko Ito

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