To provide a superior n-type diamond electron emitting element and an electronic device capable of being constructed thin and flat, having a smaller threshold voltage for electron emission, and allowing effective use of the negative electron affinity force of diamond.
An n-type diamond electron emitting element includes a high- vacuum vessel 9, which is equipped internally with an n-type diamond semiconductor 4 formed on a board 2, a surface 6 in NEA state formed by hydrogenating the surface of the diamond semiconductor, so that a hydrogenated surface is generated, an anode electrode 7 provided in the neighborhood of the mentioned surface, and a cathode electrode 8 formed on the partial surface of the n-type diamond semiconductor, whereby voltage is impressed using the semiconductor as cold cathode so that electrons are emitted.
SATO YOICHIRO
GAMO MIKA
NAT INST RES INORGANIC MAT
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