n-TYPE GROUP III NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE

Title:

n-TYPE GROUP III NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE

Document Type and Number:

Japanese Patent JP2006049848

Kind Code:

A

Abstract:

To provide a low-resistance n-type Group III nitride semiconductor layer having excellent flatness and few cracks and pits, and also to provide a Group III nitride semiconductor light emitting element having excellent light emitting efficiency with low forward voltage using the n-type Group III nitride semiconductor layer.

An n-type Group III nitride semiconductor laminated structure is formed by laminating an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer alternately. Further, the Group III nitride semiconductor light emitting element is constituted by providing the n-type Group III nitride semiconductor laminated structure between a substrate and a light emitting layer of Group III nitride semiconductor.

Inventors:

BANDO AKIRA

Application Number:

JP2005186599A

Publication Date:

February 16, 2006

Filing Date:

June 27, 2005

Export Citation:

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Assignee:

SHOWA DENKO KK

International Classes:

H01L21/205; H01L33/06; H01L33/12; H01L33/14; H01L33/32; H01L33/50

Domestic Patent References:

JP2000236142A	2000-08-29
JP2002164573A	2002-06-07
JP2004056109A	2004-02-19

Attorney, Agent or Firm:

Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Yoshihiro Kobayashi
Masaya Nishiyama

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