Title:
窒化物半導体基板
Document Type and Number:
Japanese Patent JP7198195
Kind Code:
B2
Abstract:
To provide a nitride semiconductor substrate suitable for a high frequency device.SOLUTION: In a nitride semiconductor substrate according to the present invention, a substrate, a buffer layer made of a group 13 nitride semiconductor, and an operating layer made of the group 13 nitride semiconductor are laminated in this order, and the substrate is constituted by a first substrate made of polycrystalline aluminum nitride and a second substrate made of Si single crystal with a specific resistance of 100 Ω cm or more and provided on the first substrate, and average particle size of AlN forming the first substrate is 3 to 9 μm, and preferably, the second substrate is manufactured by an MCZ method having oxygen concentration of 1E+18 to 9E+18 atoms/cm3 and specific resistance of 100 to 1000 Ω cm.SELECTED DRAWING: Figure 1
Inventors:
Koji Oishi
Jun Komiyama
Yoshihisa Abe
Kenichi Eriguchi
Jun Komiyama
Yoshihisa Abe
Kenichi Eriguchi
Application Number:
JP2019232290A
Publication Date:
December 28, 2022
Filing Date:
December 24, 2019
Export Citation:
Assignee:
CoorsTek Co., Ltd.
International Classes:
H01L21/338; C01B21/06; C23C16/34; C30B25/18; C30B29/38; H01L21/205; H01L29/778; H01L29/812
Domestic Patent References:
| JP2019528576A | ||||
| JP2017059598A |
Attorney, Agent or Firm:
Shigeru Kinoshita
Yuko Sawada
Yuko Sawada