Title:
光電子素子
Document Type and Number:
Japanese Patent JP7245527
Kind Code:
B2
Abstract:
The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150 °C.
Inventors:
Snais, Henry, James
Crossland, Edward, James, William
Hay, Andrew
Ball, james
Lee, Michael
Docampo, Pablo
Crossland, Edward, James, William
Hay, Andrew
Ball, james
Lee, Michael
Docampo, Pablo
Application Number:
JP2020020952A
Publication Date:
March 24, 2023
Filing Date:
February 10, 2020
Export Citation:
Assignee:
Oxford University Innovation Limited
International Classes:
H10K30/50; H10K30/40; H10K50/11
Domestic Patent References:
| JP2003309308A | ||||
| JP2009006548A | ||||
| JP2015529982A | ||||
| JP2015517736A | ||||
| JP2008189947A | ||||
| JP2002299063A |
Foreign References:
| WO2009104595A1 |
Other References:
Hui-Seon Kim et al.,"Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%",Scientific Reports,2012年08月21日,Vol. 2,Article number: 591, pp. 1-7,DOI: 10.1038/srep00591
Zhuo Chen et al.,"Schottky solar cells based on CsSnI3 thin-films",Applied Physics Letters,2012年08月27日,Vol. 101,pp. 093901-1-093901-4,DOI: 10.1063/1.4748888
In Chung et al.,"All-solid-state dye-sensitized solar cells with high efficiency",Nature,2012年05月24日,Vol. 485,pp. 486-490,DOI: 10.1038/nature11067
Zhuo Chen et al.,"Schottky solar cells based on CsSnI3 thin-films",Applied Physics Letters,2012年08月27日,Vol. 101,pp. 093901-1-093901-4,DOI: 10.1063/1.4748888
In Chung et al.,"All-solid-state dye-sensitized solar cells with high efficiency",Nature,2012年05月24日,Vol. 485,pp. 486-490,DOI: 10.1038/nature11067
Attorney, Agent or Firm:
Patent Attorney Corporation Asamura Patent Office
Previous Patent: Communication device, communication method and program
Next Patent: container rotating device
Next Patent: container rotating device