有機半導体素子 - Nagaoka University of Technology

Title:

有機半導体素子

Document Type and Number:

Japanese Patent JP7325084

Kind Code:

B2

Abstract:

To provide an electrode-organic semiconductor structure for causing charge carrier injection from an electrode at an extremely low voltage and to provide an organic semiconductor element having the same and operable at a low voltage.SOLUTION: The electrode-organic semiconductor structure is formed by providing an organic semiconductor layer containing carbon nanostructures on an electrode and containing 0.65 weight percent or more and 10 weight percent or less of one or more of the carbon nanostructures selected from graphene and/or carbon nanotubes. The organic semiconductor element is formed by having a separate electrode from the electrode-organic semiconductor structure.SELECTED DRAWING: Figure 3

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Inventors:

Minoru Umeda
Shota Matsuda
Hiroto Sasaki

Application Number:

JP2019056116A

Publication Date:

August 14, 2023

Filing Date:

March 25, 2019

Export Citation:

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Assignee:

Nagaoka University of Technology

International Classes:

H10K85/20; B82Y30/00; G03G5/05; G03G5/06; H01L29/47; H01L29/861; H01L29/868; H01L29/872; H10K10/26; H10K10/86; H10K50/10; H10K50/12; H10K50/14; H10K50/15; H10K50/155; H10K50/16; H10K50/165; H10K50/17; H10K50/18

Domestic Patent References:

JP2009212182A
JP2009033126A
JP2004231958A
JP2011238871A
JP2011520263A
JP2019033303A

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