Title:
An oxide semiconductor film and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6117124
Kind Code:
B2
Abstract:
Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.
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Inventors:
Masahiro Takada
Jun Tanaka
Masayuki Suzuki
Jun Tanaka
Masayuki Suzuki
Application Number:
JP2014014679A
Publication Date:
April 19, 2017
Filing Date:
January 29, 2014
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L21/368; H01L21/336; H01L27/144; H01L27/146; H01L29/24; H01L29/786; H01L51/50
Domestic Patent References:
| JP2012212874A | ||||
| JP4350745B2 | ||||
| JP2011199291A | ||||
| JP2010182852A | ||||
| JP2012228859A |
Foreign References:
| US20130059414 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda