Title:
Oxide semiconductor films, transistors, and semiconductor devices
Document Type and Number:
Japanese Patent JP6305683
Kind Code:
B2
Abstract:
To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region.
Inventors:
Shunpei Yamazaki
Masahiro Takahashi
Masahiro Takahashi
Application Number:
JP2013048733A
Publication Date:
April 04, 2018
Filing Date:
March 12, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP2011091375A | ||||
| JP2011100979A | ||||
| JP2012034354A | ||||
| JP2012257187A | ||||
| JP2011119718A | ||||
| JP2009167087A | ||||
| JP63079791A |
Foreign References:
| US20120032730 | ||||
| US20120052625 | ||||
| US20120051118 | ||||
| US20130299827 | ||||
| US20130062601 | ||||
| US20110108837 |
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