Title:
A photo acceptance unit, a semiconductor epitaxial wafer, a detecting device, and a manufacturing method of a photo acceptance unit
Document Type and Number:
Japanese Patent JP6080092
Kind Code:
B2
Abstract:
Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 µm, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.
Inventors:
Hirohira Miura
Hiroshi Inada
Yasuhiro Inoguchi
Saito
Hiroshi Inada
Yasuhiro Inoguchi
Saito
Application Number:
JP2012123515A
Publication Date:
February 15, 2017
Filing Date:
May 30, 2012
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L31/10; H01L21/205; H01L27/144; H01L27/146
Domestic Patent References:
| JP2012009777A | ||||
| JP2011082348A | ||||
| JP2011071306A |
Other References:
F.M.Mohammedy et.al,Growth and characterization of GaAsSb metamorphic samples on an InP substrate,Journal of Vacuum Science & Technology A,米国,American Vacuum Society through the American Institute of Physics,2006年,Volume 24, Number 3,p.587-590
Attorney, Agent or Firm:
Patent Corporation Heart Cluster
Seiichi Watanabe
Seiichi Watanabe