Title:
フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
Document Type and Number:
Japanese Patent JP3587743
Kind Code:
B2
Abstract:
The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1:wherein,R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone;X and Y are independently CH2, CH2CH2, oxygen or sulfur; andi is 0 or an integer of 1 to 2.
Inventors:
Lee Nemori
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
High dimension
Chung Zhao Chang
Chung Min Ho
White base ho
Application Number:
JP23893199A
Publication Date:
November 10, 2004
Filing Date:
August 25, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C69/753; C07D493/08; C08F32/00; C08F32/08; C08F232/00; G03F7/004; G03F7/039; (IPC1-7): C08F32/00; C08F232/00; G03F7/039
Domestic Patent References:
| JP11218918A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune