Title:
フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
Document Type and Number:
Japanese Patent JP4776191
Kind Code:
B2
Abstract:
A composition for removing a photoresist residue and polymer residue to remove a photoresist residue and an ashing residue remaining after dry etching and after ashing of a semiconductor substrate having metal wiring formed from aluminum or an aluminum alloy is provided, the composition containing at least one type of fluorine compound (excluding hydrofluoric acid), at least one type of sulfonic acid, and water.
Inventors:
Qin Qin
Takuo Owada
Takuo Owada
Application Number:
JP2004245717A
Publication Date:
September 21, 2011
Filing Date:
August 25, 2004
Export Citation:
Assignee:
Kanto Chemical Co., Ltd.
International Classes:
H01L21/027; G03F7/42; H01L21/304
Domestic Patent References:
| JP2000056479A | ||||
| JP2000056478A | ||||
| JP10046368A | ||||
| JP2003241400A | ||||
| JP2006011297A |
Attorney, Agent or Firm:
Kiyoji Kuzuwa