Title:
A plasma etching method and a plasma etching device
Document Type and Number:
Japanese Patent JP6141855
Kind Code:
B2
Abstract:
A plasma etching method includes a first process and a second process. In the first process, a hole is formed in a processing target film formed on a substrate accommodated within a processing chamber by performing an etching process of etching the processing target film. In the second process, a removing process, a deposition process and an extending process are repeatedly performed. In the removing process, a reaction product adhering to an inlet portion of the hole which is formed through the etching process is removed. In the deposition process, a deposit is deposited on a sidewall of the hole from which the reaction product is removed through the removing process. In the extending process, the hole, in which the deposit is deposited on the sidewall thereof through the deposition process, is deeply etched by performing the etching process.
Inventors:
Hideki Mizuno
Mountain saki Kumiko
Mountain saki Kumiko
Application Number:
JP2014536856A
Publication Date:
June 07, 2017
Filing Date:
September 17, 2013
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2010045373A | ||||
| JP2008187104A | ||||
| JP2007235135A |
Foreign References:
| WO2008097920A1 | ||||
| US20050048789 |
Attorney, Agent or Firm:
Hiroaki Sakai