PURPOSE: To obtain an SiC bulk single crystal excellent in crystallinity and homogeneity with good reproducibility by adding the silicon compd. of transition metal to an SiC powder and heating the mixture to grow an SiC single crystal on a seed crystal.
CONSTITUTION: An SiC powder mixed with 1-10% of the silicon compd. of transition metal having 1800-2500°C m.p. is filled in a graphite crucible 3. The crucible 3 is then closed with a lid 4 provided with a seed crystal 1 on its inner surface. The crucible 3 is set in a quartz tube 5 by a supporting rod 6, and the crucible 3 is covered with a heat shield 7. An inert gas is introduced into the tube 5 from the branch pipe 9 of a chamber 10, the SiC powder 2 is kept at 2100-2400°C and the seed crystal 1 at 2000-2500°C, the tube 5 us evacuated to ≤10Torr by a vacuum pump 13, the condition is kept for 1-12 hr, and an SiC single crystal is grown on the seed crystal 1.
TAJIMA YOSHIMITSU
SUZUKI AKIRA
