Title:
REFLECTION TYPE PHOTOMASK AND REFLECTION TYPE PHOTOMASK BLANK
Document Type and Number:
Japanese Patent JP2018045133
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a reflection type photomask having fine absorption film pattern formed and therefor capable of reducing projection effects even when high absorptive material is used as an absorption film in a reflection type photomask having a substrate, a multilayer reflection layer, a protection film and the absorption film, and a reflection type photomask blank for manufacturing the same.SOLUTION: There are provided a reflection type photomask and a reflection type photomask blank in which an absorption film consists of a two layer structure of a first absorption film and a second absorption film, both of the first absorption film and the second absorption film have extinction coefficient to extreme-ultraviolet ray with wavelength of 13.5 nm of 0.05 or more, one of the first absorption film and the second absorption film is easy to be etched to a chlorine-based gas and hardly being etched to a fluorine-based gas, and another is easy to be etched to the fluorine-based gas and hardly being etched to the chlorine-based gas.SELECTED DRAWING: Figure 2
Inventors:
FURUMIZO TORU
FUKUGAMI NORIHITO
FUKUGAMI NORIHITO
Application Number:
JP2016180779A
Publication Date:
March 22, 2018
Filing Date:
September 15, 2016
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
G03F1/24; H01L21/3065
Domestic Patent References:
| JP2007273678A | 2007-10-18 | |||
| JPWO2010113700A1 | 2012-10-11 |
Foreign References:
| WO2016007613A1 | 2016-01-14 |