Title:
ポリボロシロキサンを含む光半導体素子封止用樹脂、およびそれを用いて得られる光半導体装置
Document Type and Number:
Japanese Patent JP5024878
Kind Code:
B2
Abstract:
To provide a photosemiconductor-sealing resin having a higher refractive index than that of a silicone resin while maintaining a heat resistance substantially equivalent to that of the silicone resin, and also a photosemiconductor device obtained by sealing the photosemiconductor element by using the resin, having an improved optical unloading efficiency.
This photosemiconductor-sealing resin containing a polyborosiloxane obtained by reacting a silicon compound with a boron compound is characterized in that the silicon compound is expressed by formula (I) (wherein, R1, R2are each independently an alkyl or phenyl group; and X1, X2are each independently an alkoxy, or hydroxy group or a halogen), and in all of the R1and R2of the silicon compound to be used, the phenyl group occupies ≥50 mol%. The photosemiconductor device is provided by sealing the photosemiconductor element by using the sealing resin for the photosemiconductor.
COPYRIGHT: (C)2009,JPO&INPIT
Inventors:
Hiroyuki Katayama
Application Number:
JP2007306816A
Publication Date:
September 12, 2012
Filing Date:
November 28, 2007
Assignee:
NITTO DENKO CORPORATION
International Classes:
C08G77/56; C08G79/08; H01L23/29; H01L23/31; H01L33/56
Domestic Patent References:
JP10152561A | | | | |
JP54083100A | | | | |
JP2009019104A | | | | |
JP4125929A | | | | |
JP5139714A | | | | |
JP2006143873A | | | | |
JP2004292779A | | | | |
JP2009545649A | | | | |
Attorney, Agent or Firm:
Yoshinori Hosoda