A resistance change type memory device and a manufacturing method for the same

Japanese Patent JP5939482

B2

PROBLEM TO BE SOLVED: To solve the problem that although a method of forming a part of a conductive path by adding a conductive material for forming-less constitution of a resistance change type memory is designed, there is a problem, associated with element stability such as a leak of a current, in the method since there is a place where a distance between a conductive additive material and an upper metal electrode or lower metal electrode layer is too short because of the addition of the conductive material.SOLUTION: There is provided a resistance change type memory element whose resistance change layer has oxygen deficiency and also has a structure comprising a charge storage layer formed of an aluminum oxide layer to which a conductive material is added, and an aluminum oxide layer arranged having the charge storage layer sandwiched above and below and having oxygen deficiency. With this constitution, the resistance change type memory element is provided which has higher stability, reliability, and durability by two effects of high suppression on a leak and high stability of a filament in spite of foaming-less and low-voltage configurations.

Yoshiyuki Harada
Seiichi Kato
Hideaki Kitazawa
Yoshito Kido

JP2012066523A

June 22, 2016

March 23, 2012

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National Institute for Materials Science

H01L27/105; H01L45/00; H01L49/00

JP2011066285A
JP2010534941A
JP2011204785A
JP2008135752A
JP2009218411A
JP2009141225A

WO2011161936A1
US20100243983

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