Title:
ショットキーバリアダイオード
Document Type and Number:
Japanese Patent JP7147141
Kind Code:
B2
Abstract:
An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.
Inventors:
Jun Arima
Hirabayashi Jun
Fujita Minoru
Katsumi Kawasaki
Daisuke Inoguchi
Hirabayashi Jun
Fujita Minoru
Katsumi Kawasaki
Daisuke Inoguchi
Application Number:
JP2017173804A
Publication Date:
October 05, 2022
Filing Date:
September 11, 2017
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L29/872; H01L21/28; H01L29/06; H01L29/47
Domestic Patent References:
| JP2011142123A | ||||
| JP2017135175A | ||||
| JP2013102081A | ||||
| JP2015153769A | ||||
| JP2013140824A | ||||
| JP2012518292A | ||||
| JP2016157911A | ||||
| JP2002083976A | ||||
| JP2014127573A |
Foreign References:
| WO2016013554A1 | ||||
| US20140312452 | ||||
| US20110121386 | ||||
| US20130221427 | ||||
| US20130087852 |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Yasuyuki Kurose
Ogata Japanese
Yasuyuki Kurose
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