Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
A semiconductor device which has fin FET structure, and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6251604
Kind Code:
B2
More Like This:
JPS60133748MANUFACTURE OF COMPLEMENTARY MOS IC
JPH01125971C-MIS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
JP2022074058METHOD OF SIMULTANEOUS SILICIDATION ON SOURCE AND DRAIN OF NMOS AND PMOS TRANSISTORS
Inventors:
Shunji Nagumo
Application Number:
JP2014041530A
Publication Date:
December 20, 2017
Filing Date:
March 04, 2014
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/8238; H01L21/20; H01L21/302; H01L21/3065; H01L27/088; H01L27/092; H01L29/786
Domestic Patent References:
JP2008147366A
JP2010537433A
JP2007258485A
JP2014505995A
JP201073869A
Foreign References:
WO2005022637A1
US20050218427
WO2005106949A1
US20070254423
WO2005036651A1
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi



 
Previous Patent: A gearbox for vehicles

Next Patent: REFLECTOR DRIVING MECHANISM FOR PROJECTOR LAMP