Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023016594
Kind Code:
A
Abstract:
To sufficiently reduce the on-resistance of a semiconductor device.SOLUTION: A semiconductor device of the present invention comprises a plurality of columnar parts formed of a semiconductor. Each of the plurality of columnar parts has a source region, a drain region, and a channel forming region that includes a channel formed between the source region and the drain region. The semiconductor device of the present invention further comprises: a gate electrode that is provided on a side wall of the channel forming region with an insulating layer therebetween; and a first semiconductor layer that is provided on side walls of the drain regions. The conductivity type of the first semiconductor layer is different from the conductivity type of the semiconductor that forms the drain region.SELECTED DRAWING: Figure 2
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Inventors:
SHIMADA HIROYUKI
Application Number:
JP2021121036A
Publication Date:
February 02, 2023
Filing Date:
July 21, 2021
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/336
Attorney, Agent or Firm:
Yasushi Matsunuma
Kazunori Onami
Hiroyuki Matsumoto
Akio Sato
Kazunori Onami
Hiroyuki Matsumoto
Akio Sato
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