Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023065461
Kind Code:
A
Abstract:
To provide a semiconductor device including a transistor part and a diode part.SOLUTION: A semiconductor device 100 includes: a plurality of trench parts including a gate trench part 40 provided on an upper surface side of a semiconductor substrate 10 and extending in a first direction, and an emitter trench part 60 provided on the upper surface side of the semiconductor substrate and having a tip end part present more on the inside than the gate trench part in the first direction; a mesa part being a portion held between the two adjacent trench parts; an interlayer insulating film 38 provided on the upper surface of the semiconductor substrate; and a gate conductor part 44 formed of polysilicon in contact with a tip end part of the gate trench part on the upper surface side of the semiconductor substrate. In a region where upper surfaces of the plurality of mesa parts are covered with the interlayer insulating film, the gate trench part is provided.SELECTED DRAWING: Figure 1B
Inventors:
Tomoyuki Obata
Takakazu Yoshida
Tetsutaro Imagawa
Momota Seiji
Takakazu Yoshida
Tetsutaro Imagawa
Momota Seiji
Application Number:
JP2023021098A
Publication Date:
May 12, 2023
Filing Date:
February 14, 2023
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/739; H01L21/336; H01L21/822; H01L21/8234; H01L29/12; H01L29/78; H01L29/861
Attorney, Agent or Firm:
Patent Attorney Corporation RYUKA International Patent Office