Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023123185
Kind Code:
A
Abstract:
To provide a semiconductor device capable of suppressing a recovery loss and having high breakdown voltage characteristics.SOLUTION: A conductor layer of a semiconductor device has: a drift region of a first conductivity type; a pillar region of the first conductivity type in contact with a part of a top face of the drift region; a second conductivity type region in contact with the other part of the top face of the drift region, the second conductivity type region including an anode region of a second conductivity type arranged at a portion in contact with a lateral face of the pillar region, a base region of the second conductivity type in contact with a top face of the pillar region, and a contact region of the second conductivity type arranged at a position exposed to a top face of a semiconductor layer and electrically connected with a second main electrode; and a source region of the first conductivity type in contact with a top face of the base region of the second conductivity type region, arranged at a position exposed to the top face of the semiconductor layer, and electrically connected with the second main electrode.SELECTED DRAWING: Figure 1
Inventors:
YAMASHITA YUSUKE
KIKUTA DAIGO
WATANABE YUKIHIKO
HAYAMA YUSUKE
KIKUTA DAIGO
WATANABE YUKIHIKO
HAYAMA YUSUKE
Application Number:
JP2022027101A
Publication Date:
September 05, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
DENSO CORP
DENSO CORP
International Classes:
H01L29/861
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office
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