SEMICONDUCTOR DEVICE - RENESAS ELECTRONICS CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2023165124

Kind Code:

A

Abstract:

To improve performance of a semiconductor device.SOLUTION: A wiring board 10 includes: an insulation layer 10A2; a conductor layer CL2 formed on an upper surface A1t of the insulation layer 10A2; an insulation layer 10A1 formed on the upper surface A1t of the insulation layer 10A2; a conductor layer CL1 formed on the insulation layer 10A1; a conductor layer CL3 formed on a lower surface A1b of the insulation layer 10A2; an insulation layer 10A3 formed on the lower surface A1b of the insulation layer 10A2; and a conductor layer CL4 formed on the insulation layer 10A3. When it is assumed that an occupancy of a conductor pattern CP2 in the conductor layer CL2 is a first occupancy, an occupancy of a conductor pattern CP1 in the conductor layer CL1 is a second occupancy, an occupancy of a conductor pattern CP3 in the conductor layer CL3 is a third occupancy, and an occupancy of a conductor pattern CP4 in the conductor layer CL4 is a fourth occupancy, each of the first occupancy and the third occupancy is larger than each of the second occupancy and the fourth occupancy.SELECTED DRAWING: Figure 5

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Inventors:

KARASHIMA TAKASHI

Application Number:

JP2022075783A

Publication Date:

November 15, 2023

Filing Date:

May 02, 2022

Export Citation:

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Assignee:

RENESAS ELECTRONICS CORP

International Classes:

H01L23/12; H01L21/60

Attorney, Agent or Firm:

Patent Attorney Tsutsui International Patent Office

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