Title:
半導体装置
Document Type and Number:
Japanese Patent JP7210342
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate including first and second surfaces, and a first semiconductor layer of a first conductivity type, a first electrode on the first surface, a first control electrode that is inwardly from the first surface and electrically insulated from the semiconductor substrate and the first electrode, a second control electrode that is inwardly from the first surface, electrically insulated from the semiconductor substrate and the first electrode via a fourth insulating film, and biased independently from the first control electrode, a third control electrode on the second surface and electrically insulated from the semiconductor substrate, and a second electrode on the second surface and electrically connected to the semiconductor substrate.
Inventors:
Tomoko Sueshiro
Yoko Iwao
Yoko Iwao
Application Number:
JP2019050052A
Publication Date:
January 23, 2023
Filing Date:
March 18, 2019
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/78; H01L21/8234; H01L27/088; H01L29/06
Domestic Patent References:
| JP2000101076A | ||||
| JP2001320049A | ||||
| JP64057674A |
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao