Title:
半導体装置
Document Type and Number:
Japanese Patent JP7222481
Kind Code:
B2
Abstract:
To provide a semiconductor device capable of achieving a high capacity of a built-in capacitor while suppressing an increase in a substrate area.SOLUTION: A semiconductor device 100 includes a plurality of semiconductor chips 101 arranged in a thickness direction T and a first through wire 107 and a second through wire 108 penetrating through the plurality of semiconductor chips 101 in the thickness direction T. One of two conductor layers 107, 108 constituting each semiconductor chip 101 and adjacent to each other in the thickness direction T is connected with a first through wire 102 and the other is connected with a second through wire 103.SELECTED DRAWING: Figure 1
Inventors:
Koji Sakui
Takayuki Oba
Takayuki Oba
Application Number:
JP2019050061A
Publication Date:
February 15, 2023
Filing Date:
March 18, 2019
Export Citation:
Assignee:
Honda motor industry stock company
National University Corporation Tokyo Institute of Technology
National University Corporation Tokyo Institute of Technology
International Classes:
H01L21/822; H01L25/065; H01L25/07; H01L25/18; H01L27/00; H01L27/04
Domestic Patent References:
| JP2007165922A | ||||
| JP2000022285A | ||||
| JP2018014630A | ||||
| JP2016025103A | ||||
| JP2015502651A | ||||
| JP2013506290A | ||||
| JP2016143853A | ||||
| JP2018055740A |
Foreign References:
| US20170069601 | ||||
| WO2015083289A1 |
Attorney, Agent or Firm:
田▲崎▼ 聡
Suzuki Shingo
Taichi Sakai
Shinichi Watanabe
Suzuki Shingo
Taichi Sakai
Shinichi Watanabe
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