Title:
半導体装置
Document Type and Number:
Japanese Patent JP7230252
Kind Code:
B2
Abstract:
A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; an impurity element for controlling the threshold value is added into the microcrystalline semiconductor film by an ion implantation method; the microcrystalline semiconductor film is irradiated with a laser beam so that the crystallinity of the microcrystalline semiconductor film is improved; and then, a buffer layer is formed over the microcrystalline semiconductor film, whereby a channel-etched thin film transistor is formed. Further, a display device including the thin film transistor is manufactured.
Inventors:
Sanpei Yamazaki
Application Number:
JP2022027434A
Publication Date:
February 28, 2023
Filing Date:
February 25, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1345; G09F9/30; G02F1/1368; H01L21/20; H01L21/268; H01L21/336; H01L29/786; H01L51/50; H05B33/10; H05B33/14
Domestic Patent References:
| JP6505605A | ||||
| JP2004004348A | ||||
| JP2004078172A | ||||
| JP2005050502A | ||||
| JP2005527856A | ||||
| JP2006039524A | ||||
| JP2007108733A |
Foreign References:
| US20060145998 |
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