Title:
半導体装置
Document Type and Number:
Japanese Patent JP7280206
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor member, a gate electrode, a source electrode, a drain electrode, a conductive member, a gate terminal, and a first circuit. The semiconductor member includes a first semiconductor layer including a first partial region and including Alx1Ga1−x1N (0≤x1≤1), and a second semiconductor layer including Alx2Ga1−x2N (0
Inventors:
Masahiko Kuraguchi
Eisuke Kajiwara
Kentaro Ikeda
Eisuke Kajiwara
Kentaro Ikeda
Application Number:
JP2020001869A
Publication Date:
May 23, 2023
Filing Date:
January 09, 2020
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/338; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/06; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JP2012248753A | ||||
| JP2019220557A | ||||
| JP2017055071A | ||||
| JP2011009504A | ||||
| JP2013062298A |
Foreign References:
| US20150371987 | ||||
| CN207183255U |
Attorney, Agent or Firm:
Masahiko Hyugaji
Junichi Kozaki
Hiroshi Ichikawa
Tatsuaki Shirai
Takato Uchida
Isao Takeuchi
Junichi Kozaki
Hiroshi Ichikawa
Tatsuaki Shirai
Takato Uchida
Isao Takeuchi