Title:
半導体装置
Document Type and Number:
Japanese Patent JP7292233
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes a first element region. The first element region includes first, second, and third semiconductor regions, and first, and second conductive layers. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the first conductive layer crosses a first direction from the second partial region toward the first partial region. The third partial region is between the second partial region and the second conductive layer in the second direction. The second semiconductor region includes a first semiconductor portion. The first semiconductor portion is between the first partial region and the first conductive layer in the second direction. At least a portion of the third semiconductor region is between the first partial region and the first semiconductor portion in the second direction.
Inventors:
Teruyuki Ohashi
Hiroshi Kawano
Dai Furukawa
Hiroshi Kawano
Dai Furukawa
Application Number:
JP2020041890A
Publication Date:
June 16, 2023
Filing Date:
March 11, 2020
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/872; H01L29/12; H01L29/78
Domestic Patent References:
| JP2017055009A | ||||
| JP2010225878A | ||||
| JP2015029046A | ||||
| JP5992094B2 | ||||
| JP2006511961A |
Attorney, Agent or Firm:
Masahiko Hyugaji
Junichi Kozaki
Hiroshi Ichikawa
Tatsuaki Shirai
Takato Uchida
Isao Takeuchi
Junichi Kozaki
Hiroshi Ichikawa
Tatsuaki Shirai
Takato Uchida
Isao Takeuchi
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