Title:
半導体装置
Document Type and Number:
Japanese Patent JP7337739
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part includes first to third layers. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided on a front surface of the semiconductor part. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is provided between the second layer and the second electrode. The second electrode includes a buried contact portion and a surface contact portion. The buried contact portion extends into the second layer from the front surface of the semiconductor part and contacts the second layer. The surface contact portion contacts the third layer at the front surface of the semiconductor part.
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Inventors:
Tomoko Sueshiro
Hiroko Itokazu
Keiko Kawamura
Yoko Iwao
Kaori Fuse
Hiroko Itokazu
Keiko Kawamura
Yoko Iwao
Kaori Fuse
Application Number:
JP2020048761A
Publication Date:
September 04, 2023
Filing Date:
March 19, 2020
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/861; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/41; H01L29/43; H01L29/739; H01L29/78; H01L29/868; H01L29/872
Domestic Patent References:
| JP2017055079A | ||||
| JP11112005A |
Foreign References:
| WO2011105434A1 | ||||
| US20120025283 | ||||
| US20150228723 | ||||
| US20090065814 | ||||
| US20190081147 |
Attorney, Agent or Firm:
Patent Attorney Firm iX