Title:
半導体装置
Document Type and Number:
Japanese Patent JP7395036
Kind Code:
B2
Abstract:
A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.
Inventors:
Hajime Nakano
Mai Sugikawa
Kosei Noda
Mai Sugikawa
Kosei Noda
Application Number:
JP2023004321A
Publication Date:
December 08, 2023
Filing Date:
January 16, 2023
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H10B12/00
Domestic Patent References:
| JP201154949A | ||||
| JP2010114413A | ||||
| JP20111249A | ||||
| JP2007123861A | ||||
| JP201016348A |