Title:
半導体装置
Document Type and Number:
Japanese Patent JP7410991
Kind Code:
B2
Abstract:
A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.
Inventors:
Shunpei Yamazaki
Kensuke Yoshizumi
Kensuke Yoshizumi
Application Number:
JP2022020164A
Publication Date:
January 10, 2024
Filing Date:
February 14, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336; H10B12/00; H10B41/70; H10B99/00
Domestic Patent References:
| JP2007525004A | ||||
| JP2004349291A | ||||
| JP2011135067A | ||||
| JP2009123882A |