Title:
半導体装置
Document Type and Number:
Japanese Patent JP7420999
Kind Code:
B2
Abstract:
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.
More Like This:
| JP5395471 | Thin film transistor |
| WO/2010/079573 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND BIOSENSOR |
| JP6495754 | Display device |
Inventors:
Daisuke Matsubayashi
Yuichi Yanagisawa
Masahiro Takahashi
Yuichi Yanagisawa
Masahiro Takahashi
Application Number:
JP2023069136A
Publication Date:
January 23, 2024
Filing Date:
April 20, 2023
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/786; H10B12/00; H10B41/70
Domestic Patent References:
| JP2017130647A | ||||
| JP201873995A | ||||
| JP201850044A |
Foreign References:
| WO2017072627A1 | ||||
| US20170170211 |