Title:
半導体装置
Document Type and Number:
Japanese Patent JP7456042
Kind Code:
B2
Abstract:
Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.
Inventors:
Shunpei Yamazaki
Satoshi Shinohara
Satoshi Shinohara
Application Number:
JP2023061361A
Publication Date:
March 26, 2024
Filing Date:
April 05, 2023
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/336; H01L27/146; H05B33/14; H10B12/00; H10K50/10; H10K59/12
Domestic Patent References:
| JP2011049539A | ||||
| JP2010226101A | ||||
| JP2008243928A | ||||
| JP2011135066A | ||||
| JP2011124360A |
Foreign References:
| WO2009034953A1 | ||||
| WO2010023889A1 |