Title:
半導体装置
Document Type and Number:
Japanese Patent JP7458517
Kind Code:
B2
Abstract:
A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.
Inventors:
Shunpei Yamazaki
Hiroyuki Miyake
Takahiro Sato
Masami Kaminaga
Hiroyuki Miyake
Takahiro Sato
Masami Kaminaga
Application Number:
JP2023001040A
Publication Date:
March 29, 2024
Filing Date:
January 06, 2023
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP2008244205A | ||||
| JP2009158940A | ||||
| JP2009265326A |
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