A semiconductor photocathode, a manufacturing method for the same, an electron tube, and an image intensifier tube

Japanese Patent JP6200175

B2

A semiconductor photocathode includes an Al X Ga 1-X N layer (0 ‰¤ X < 1) bonded to a glass substrate via an SiO 2 layer and an alkali-metal-containing layer farmed on the Al X Ga 1-X N layer. The Al X Ga 1-X N layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiO 2 layer at least in the intermediate region.

Fukuya Toshiro
Tetsuji Matsuo
Yoshihiro Ishigami
Tokuaki Futahashi

JP2013060938A

September 20, 2017

March 22, 2013

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Sanken Electric Co., Ltd.
Hamamatsu Photonics Co., Ltd.

H01J1/34; H01J9/12; H01J29/45; H01J31/38

JP3623068B2
JP2002150928A
JP5127978B2

EP1098347A1

HAO, Guanhui, et al.,"Influnce of Al fraction on photoemission performance of AlGaN photocathode",Applied Optics,米国,Optical Society of America,2014年 6月 4日,Volume 53, No. 17,Page 3637-3641

Yoshiki Hasegawa
Yoshiki Kuroki
Satoru Ishida

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