Title:
SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP2023113346
Kind Code:
A
Abstract:
To provide a semiconductor memory that can ensure high reliability.SOLUTION: A semiconductor memory according to an embodiment comprises: a laminate 10 in which a plurality of conductive layers 11 formed of molybdenum (Mo) are laminated in a first direction while being separated from each other; pillar structures 20 that each include a semiconductor layer 21 extending in the first direction in the laminate; section structures 30 that each extend in the first direction and a second direction intersecting the first direction in the laminate, and divide the laminate in a third direction intersecting the first and second directions; and a plurality of intermediate layers 61 that each include a portion provided between the pillar structure and the corresponding conductive layer, and are formed of a compound of molybdenum (Mo) and boron (B).SELECTED DRAWING: Figure 3
Inventors:
TAJIMA HIKARI
KITAMURA MASAYUKI
OMOTO SEIICHI
KITAMURA MASAYUKI
OMOTO SEIICHI
Application Number:
JP2022015650A
Publication Date:
August 16, 2023
Filing Date:
February 03, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H10B43/27; H01L21/336
Attorney, Agent or Firm:
Suzue International Patent Office