Title:
A sensor, a method, and a semiconductor sensor
Document Type and Number:
Japanese Patent JP5936250
Kind Code:
B2
Abstract:
Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
More Like This:
| JPS5737969 | INPUT-OUTPUT HEAD FOR INFORMATION PROCESSOR |
| JPS5882580 | PHOTOCONDUCTIVE ELEMENT |
| JPS58139464 | SEMICONDUCTOR DEVICE |
Inventors:
Chen Ji-Yen
James the Fiorenza
Calvin Sheen
Anthony Jay Loctefeld
James the Fiorenza
Calvin Sheen
Anthony Jay Loctefeld
Application Number:
JP2010066291A
Publication Date:
June 22, 2016
Filing Date:
March 23, 2010
Export Citation:
Assignee:
Taiwan Semiconductor Manufacturing Company,Ltd.
International Classes:
H01L31/10; H01L27/144; H01L27/146
Domestic Patent References:
| JP2007123588A | ||||
| JP2008546181A |
Attorney, Agent or Firm:
Kuro Fukami
Yoshihei Nakamura
Yutaka Horii
Nobuo Arakawa
Masato Sasaki
Yoshihei Nakamura
Yutaka Horii
Nobuo Arakawa
Masato Sasaki