Title:
A silicon-carbide-monocrystal board and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6183010
Kind Code:
B2
Abstract:
A method of manufacturing a silicon carbide single-crystal substrate includes the following steps. A seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material are prepared. A silicon carbide single crystal is grown on the main surface by sublimating the silicon carbide source material while maintaining a temperature gradient between any two points in the silicon carbide source material at 30° C./cm or less. The main surface of the seed crystal is a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, and the main surface has a screw dislocation density of 20/cm2 or more. Thus, a silicon carbide single-crystal substrate capable of achieving improved crystal quality and a method of manufacturing the same are provided.
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Inventors:
Ben Hori
Tomohiro Kawase
Nobu Sasaki
Tomohiro Kawase
Nobu Sasaki
Application Number:
JP2013139771A
Publication Date:
August 23, 2017
Filing Date:
July 03, 2013
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36
Domestic Patent References:
| JP2013067523A | ||||
| JP2001294499A | ||||
| JP2007230846A | ||||
| JP2012046377A | ||||
| JP2005179155A | ||||
| JP2011219296A | ||||
| JP2005239465A | ||||
| JP2002284599A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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