Title:
炭化シリコンショットキーダイオード
Document Type and Number:
Japanese Patent JP7112099
Kind Code:
B2
Abstract:
A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.
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Inventors:
Seema Dimitriev
Jisheng Han
Jisheng Han
Application Number:
JP2019532038A
Publication Date:
August 03, 2022
Filing Date:
December 13, 2017
Export Citation:
Assignee:
GRIFFITH UNIVERSITY
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/47
Domestic Patent References:
| JP2016139698A | ||||
| JP2014187364A | ||||
| JP2012231019A | ||||
| JP2013102081A | ||||
| JP2004515080A | ||||
| JP2012230991A |
Foreign References:
| US20140332823 | ||||
| WO2013069728A1 | ||||
| CN1663053A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Hayashi Taro Takahashi
Mitsutsugu Sugimura
Hayashi Taro Takahashi
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