Title:
A silicon carbide semiconductor device manufactured by a manufacturing method and the method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6112699
Kind Code:
B2
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Inventors:
Akinori Kinoshita
Takashi Tsuji
Kenji Fukuda
Takashi Tsuji
Kenji Fukuda
Application Number:
JP2012082041A
Publication Date:
April 12, 2017
Filing Date:
March 30, 2012
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
National Institute of Advanced Industrial Science and Technology
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L21/28; H01L29/47; H01L29/872
Domestic Patent References:
| JP2006344688A | ||||
| JP2009094392A | ||||
| JP2009266969A | ||||
| JP9052796A | ||||
| JP2012248729A | ||||
| JP2010062524A | ||||
| JP2000208438A |
Foreign References:
| WO2010134344A1 | ||||
| WO2011115294A1 |
Attorney, Agent or Firm:
Akinori Sakai
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