Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2017063145
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To solve a problem that a back electrode on a silicide layer, which is formed on a rear face side of a silicon carbide semiconductor substrate by laser annealing has extremely poor adhesion to the silicon carbide semiconductor substrate so that the back electrode is sometime separated.SOLUTION: In a silicon carbide semiconductor device including a back electrode formed on a rear face of a silicon carbide substrate, a width or an area of a second region where the silicon carbide semiconductor substrate and the back electrode directly contact each other to a first region having a silicide layer between the silicon carbide semiconductor substrate and the back electrode is set at not less than 0.5 times and not more than 1.5 times larger.SELECTED DRAWING: Figure 1
Inventors:
NAKANISHI YOSUKE
OKABE HIROAKI
NARASAKI ATSUSHI
SHIKAGUCHI NAOTO
KAGAWA YASUHIRO
TAGUCHI KENSUKE
SUGAHARA KAZUYUKI
OKABE HIROAKI
NARASAKI ATSUSHI
SHIKAGUCHI NAOTO
KAGAWA YASUHIRO
TAGUCHI KENSUKE
SUGAHARA KAZUYUKI
Application Number:
JP2015188488A
Publication Date:
March 30, 2017
Filing Date:
September 25, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/28; H01L21/20; H01L21/265; H01L21/268; H01L21/329; H01L29/41; H01L29/872
Domestic Patent References:
| JP2011054698A | 2011-03-17 | |||
| JP2015176992A | 2015-10-05 | |||
| JP2015115583A | 2015-06-22 | |||
| JP2007534143A | 2007-11-22 | |||
| JP2009010359A | 2009-01-15 |
Foreign References:
| US20150263179A1 | 2015-09-17 |
Attorney, Agent or Firm:
Tadahiko Inaba
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka
Previous Patent: Part packing object
Next Patent: A transformer device and a manufacturing method for the same
Next Patent: A transformer device and a manufacturing method for the same