Title:
AU WIRE FOR SEMICONDUCTOR ELEMENT BONDING USE
Document Type and Number:
Japanese Patent JP3043878
Kind Code:
B2
Abstract:
PURPOSE: To obtain the title Au wire, which increases a high-temperature tensile strength to make it possible to limit a wire shifting at the time of resin-sealing a well as to heighten the form of a loop at the time of time of bonding and is capable of improving the durability and reliability of a semiconductor device, by a method wherein a specified amount of Sc is doped to a high-purity Au film and the like.
CONSTITUTION: An Au wire for semiconductor element bonding use is formed into one obtainable by doping 3 to 20wtppm of Sc to a high-purity Au film. Or, the Au wire is formed into one obtainable by doping 3 to 20wtppm of the Sc and 3 to 20wtppm of Be to the high-purity Au film. Alternatively, the Au wire is formed into one obtainable by doping 3 to 20wtppm of the Sc, 3 to 20wtppm of the Be and 20wtppm or less of one kind or two kinds of element chosen from among Ca, Y and rare earth element to the high-purity Au film within the range of the total amount of 6 to 40 wtppm. For example, Sc is doped to an inevitable impurity-containing high-purity Au film to dissolve and case, then, a grooved roll work is performed and after an annealing treatment is performed in the middle of the above roll work, the workpiece is formed into a busbar having a wire diameter of 25μm by a wire drawing work and moreover, after removal of stress is sufficiently performed,. the busbar is tested. The result is formed like an Au wire shown in the diagram.
Inventors:
Ikko Itabashi
Application Number:
JP33890591A
Publication Date:
May 22, 2000
Filing Date:
December 20, 1991
Export Citation:
Assignee:
Tanaka Electronics Co., Ltd.
International Classes:
C22C5/02; H01L21/60; (IPC1-7): H01L21/60
Domestic Patent References:
| JP5896741A | ||||
| JP53112059A |
Attorney, Agent or Firm:
Masana Hayakawa